Opening book details…
About this Engineering article
Analysis of Si:C on Relaxed SiGe by Reciprocal Space Mapping for MOSFET Applications by Lee, M. H.; Chen, P.- G.; Chang, S. T. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lee, M. H.; Chen, P.- G.; Chang, S. T.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 2162-8769)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)