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About this Engineering article
HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices by Lu, N.; Li, H.-J.; Peterson, J. J.; Kwong, D. L. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lu, N.; Li, H.-J.; Peterson, J. J.; Kwong, D. L.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)
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