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Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas by M. Motyka; R. Kudrawiec; M. Syperek; J. Misiewicz; M. Rudziński; P.R. Hageman; P.K. Larsen is a Engineering article available to read on EtoBox.
What is Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas about?
AlGaN/GaN heterostructures with a two dimensional electron gas (2DEG) at the interface have been investigated by contactless electroreflectance (CER) and photoreflectance (PR) spectroscopies. It has been shown that the 2DEG effectively screens the GaN layer and hence no signal related to a bandgap transition in the GaN layer is observed in CER spectra whereas the CER signal related to a bandgap transition in the AlGaN layer is very strong. The screening phenomenon is unimportant for PR spectroscopy due to different mechanism of the electromodulation. As a result both GaN and AlGaN related transitions are clearly observed in PR spectra. It has been proposed that the screening phenomena observed in CER can find application in contactless detection of the 2DEG in AlGaN/GaN heterostructures.
Who reads Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- M. Motyka; R. Kudrawiec; M. Syperek; J. Misiewicz; M. Rudziński; P.R. Hageman; P.K. Larsen
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)