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About this Engineering article
Effect of High-temperature Anneal on Interface States Generation in Stressed Metal-oxide-semiconductor Devices by M. Berger; E. Avni; J. Shappir is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- M. Berger; E. Avni; J. Shappir
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1991
- Language
- EN
- Field
- Engineering (Physical Sciences)