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A study about the wet oxidation of crystalline and ion damaged 6H-SiC by R Nipoti; M Madrigali; A Sambo is a Materials Science article available to read on EtoBox.
What is A study about the wet oxidation of crystalline and ion damaged 6H-SiC about?
This paper reports a study about the wet oxidation of crystalline and ion damaged 6H-SiC. The oxidation temperature was constant and equal to 1100°C. The oxidation time ranged between 10 and 360 min. 6H-SiC wafers, n-type, Si terminated, on-axis 0001 oriented were used. Selected area of the wafer surface were implanted by Ar + ions at 170 keV and fluence equal to 1.1 × 10 15 cm -2 . The disordered atomic fraction and the depth of the as-implanted layers, the composition and the thickness of the thermally grown oxides, and the structural quality of the 6H-SiC crystal below the oxides were studied by the Rutherford backscattering (RBS) technique in channeling geometry. Some comparisons for oxidations done in a dry ambient and for wafers damaged by Ar + at 30 keV are also presented. This study confirms that the oxidation rate of ion damaged 6H-SiC is always faster than that of Si terminated virgin 6H-SiC crystal, moreover, the presence of hydrogen in the wet ambient further accelerated the process at the ion damaged 6H-SiC surface. The structural quality of the semiconductor at the interface with the oxide is equivalent in the case of ion damaged and virgin 6H-SiC provided that all th
Who reads A study about the wet oxidation of crystalline and ion damaged 6H-SiC?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- R Nipoti; M Madrigali; A Sambo
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)
- Published
- 1999
- Language
- EN
- Field
- Materials Science (Physical Sciences)