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Can I read Vertical nanoscale strain-induced electronic localization in epitaxial La~2/3~Sr~1/3~MnO~3~ films with ZrO~2~ nanopillar inclusions on EtoBox?
Vertical nanoscale strain-induced electronic localization in epitaxial La~2/3~Sr~1/3~MnO~3~ films with ZrO~2~ nanopillar inclusions by Yuze Gao; Manuel A. Roldan; Liang Qiao; David Mandrus; Xuechu Shen; Matthew F. Chisholm; David J. Singh; Guixin Cao is a Engineering article available to read on EtoBox.
What is Vertical nanoscale strain-induced electronic localization in epitaxial La~2/3~Sr~1/3~MnO~3~ films with ZrO~2~ nanopillar inclusions about?
## Abstract Unusual electrical transport properties associated with weak or strong localization are sometimes found in disordered electronic materials. Here, we report experimental observation of a crossover of electronic behavior from weak localization to enhanced weak localization due to the spatial influence of disorder induced by ZrO~2~ nanopillars in (La~2/3~Sr~1/3~MnO~3~)~1−x~:(ZrO~2~)~x~ (x = 0, 0.2, and 0.3) nanocomposite films. The spatial strain regions, identified by scanning transmission electron microscopy and high-resolution x-ray diffraction, induce a coexistence of two-dimentional (2D) and three-dimentional (3D) localization and switches to typical 2D localization with increasing density of ZrO~2~ pillars due to length scale confinement, which interestingly accords with enhancing vertically interfacial strain. Based on the excellent agreement of our experimental results with one-parameter scaling theory of localization, the enhanced weak localization exists in metal range close to the fixed point. These films provide a tunable experimental model for studying localization in particular the transition regime by appropriate choice of the second epitaxial phase. Graphic
Who reads Vertical nanoscale strain-induced electronic localization in epitaxial La~2/3~Sr~1/3~MnO~3~ films with ZrO~2~ nanopillar inclusions?
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- Author
- Yuze Gao; Manuel A. Roldan; Liang Qiao; David Mandrus; Xuechu Shen; Matthew F. Chisholm; David J. Singh; Guixin Cao
- Publisher
- Springer Science and Business Media LLC
- Published
- 2023
- Language
- EN
- Field
- Engineering (Physical Sciences)