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Cubic silicon carbide surface reconstructions and Si (C) nanostructures at the atomic scale by P. Soukiassian is a Materials Science article available to read on EtoBox.

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In this review article, I present an overview of the latest investigations of atomic scale ordering and properties of cubic silicon carbide surfaces and self-organized nanostructures. These studies are based on room and high temperature scanning tunneling microscopy (STM), photoelectron spectroscopy using synchrotron radiation and ab initio theoretical local density functional (LDF) calculations. I focus on the Si-terminated and C-terminated b-SiC(100) surfaces only. The ordering of the Si-terminated c (4 )/2) and the C-terminated c (2)/2) surface reconstructions is driven by surface stress which, surprisingly, extends far below the surface. Important issues, such as (i) the atomic control and structure of the c (4 )/2) and c (2 )/2) surfaces, (ii) the role of stress in surface and sub-surface organization, (iii) the role of defects and antiphase boundaries, (iv) the existence of a reversible semiconducting c (4)/2) to metallic 2)/1 phase transition with non-Fermi liquid behavior, (v) the self-formation on the Si terminated surfaces of Si atomic lines and dimer vacancy chains having unprecedented characteristics (massively parallel organization, longest atomic lines ever built on a

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Author

P. Soukiassian

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)

Published

2002

Language

EN

Field

Materials Science (Physical Sciences)