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Boron Diffusion Behavior in Silicon During Shallow P+/n Junction Formation by Non-melt Excimer Laser Annealing by Siti Rahmah Aid; Satoru Matsumoto; Genshu Fuse is a Materials Science article available to read on EtoBox.

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## Abstract Boron diffusion in silicon during the formation of a shallow __p__^+^/__n__ junction has been studied. Low‐energy/high‐dose boron was implanted in germanium preamorphized silicon. Preannealing involving rapid thermal annealing for 10 s, followed by annealing involving non‐melt laser annealing for several nanoseconds were then performed to regrow the amorphous layer and to activate dopants. We found that this combination of processes results in anomalous diffusion of boron (despite the annealing being performed within several nanoseconds), which increases the junction depth of annealed samples.

Who reads Boron Diffusion Behavior in Silicon During Shallow P+/n Junction Formation by Non-melt Excimer Laser Annealing?

Author

Siti Rahmah Aid; Satoru Matsumoto; Genshu Fuse

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)

Published

2011

Language

EN

Field

Materials Science (Physical Sciences)