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About this Engineering article
III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation by Gu, J. J.; Koybasi, O.; Wu, Y. Q.; Ye, P. D. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Gu, J. J.; Koybasi, O.; Wu, Y. Q.; Ye, P. D.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2011
- Field
- Engineering (Physical Sciences)
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