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This paper reviews the robustness and reliability of silicon (Si) and silicon carbide (SiC) FET devices for More Electric Aircraft (MEA) applications, highlighting the shift towards 270 V DC systems. It experimentally investigates various FET technologies, including SiC trench and planar MOSFETs, under Unclamped Inductive Switching and gate oxide stress tests, emphasizing the importance of reliability against single event failures. The findings indicate that SiC devices generally outperform silicon devices

Author

evelinemaloma

Language

EN