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About this Engineering article
A Study on the AA/STI Corner Shape Impact on Narrow Width MOSFET Idsat/Ioff Performance for 28nm Technology Node by Pu, Y.; Shi, X.; Kim, J.; Yu, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Pu, Y.; Shi, X.; Kim, J.; Yu, S.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 1938-6737)
- Published
- 2013
- Language
- EN
- Field
- Engineering (Physical Sciences)