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Can I read Molecular beam epitaxy of p-type cubic GaMnN layers on EtoBox?
Molecular beam epitaxy of p-type cubic GaMnN layers by C.T. Foxon; S.V. Novikov; L.X. Zhao; K.W. Edmonds; A.D. Giddings; K.Y. Wang; R.P. Campion; C.R. Staddon; M.W. Fay; Y. Han; P.D. Brown; M. Sawicki; B.L. Gallagher is a Engineering article available to read on EtoBox.
What is Molecular beam epitaxy of p-type cubic GaMnN layers about?
Using Mn as a dopant, we developed a new method for reproducible p-type doping of cubic GaN in plasma-assisted molecular beam epitaxy (PA-MBE). Hole densities 410 18 cm À3 and hole mobilities 4300 cm 2 /V s have been achieved in our cubic GaMnN films. The Ga:N flux ratio during growth has a strong influence on the electrical properties of the films. PA-MBE growth of cubic GaMnN shows great potential for electrical and spintronic devices.
Who reads Molecular beam epitaxy of p-type cubic GaMnN layers?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- C.T. Foxon; S.V. Novikov; L.X. Zhao; K.W. Edmonds; A.D. Giddings; K.Y. Wang; R.P. Campion; C.R. Staddon; M.W. Fay; Y. Han; P.D. Brown; M. Sawicki; B.L. Gallagher
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2005
- Language
- EN
- Field
- Engineering (Physical Sciences)