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Can I read Novel Multi-alicyclic Polymers for Enhancing Plasma Etch Resistance in 193 Nm Lithography on EtoBox?
Novel Multi-alicyclic Polymers for Enhancing Plasma Etch Resistance in 193 Nm Lithography by Jai-Hyong Lee; Kwang-Duk Ahn; Iwhan Cho is a Materials Science article available to read on EtoBox.
What is Novel Multi-alicyclic Polymers for Enhancing Plasma Etch Resistance in 193 Nm Lithography about?
Fully multi-alicylic polymers designed for use as 193 nm photoresist materials have been synthesized by vinyl addition polymerization of tetracarbocyclic norbornene derivatives, t-butyl tetracyclo[4.4.0.1. 2,5 1 7,10 ]dodec-8-ene-3-carboxylate (t-BDN) and 3-acetoxytetracyclo-[4.4.0.1. 2,5 1 7,10 ]dodec-8-ene (AcODN). The alicyclic polymer backbones of these polymers provide plasma etch resistance and mechanical properties. Two pendant groups were introduced to provide the desired lithographic functions: the t-butyl carboxylate group as a carboxylic acid functionality masked by a protecting group undergoes acid-catalyzed thermolysis; and the acetoxy polar group influences adhesion, wettability and dissolution properties of the polymers. The polymer showed an acceptable high transmittance at 193 nm and good adhesion property. The plasma etch rates of the copolymer poly(t-BDN-co-AcODN) (85:15) using CF 4 /CHF 3 mixed gas were 1.01 times with respect to a novolac based resist. The 0.2 mm line-and-space patterns were obtained with a dose of 45 mJ cm Ϫ2 using a KrF excimer laser stepper.
Who reads Novel Multi-alicyclic Polymers for Enhancing Plasma Etch Resistance in 193 Nm Lithography?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Jai-Hyong Lee; Kwang-Duk Ahn; Iwhan Cho
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0032-3861)
- Published
- 2001
- Language
- EN
- Field
- Materials Science (Physical Sciences)