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About this Engineering article
A Theoretical Analysis of the Formation of Nonstoichiometric Point Defects in SiC Single Crystals Grown under Equilibrium Conditions at Different Partial Pressures of Silicon Vapor by A. P. Garshin; E. N. Mokhov; V. E. Shvaiko-Shvaikovskii is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- A. P. Garshin; E. N. Mokhov; V. E. Shvaiko-Shvaikovskii
- Publisher
- Springer US; Springer-Verlag; Kluwer Academic/Plenum Publishers; Springer Science and Business Media LLC (ISSN 1573-9139)
- Published
- 2003
- Field
- Engineering (Physical Sciences)
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