About this scholarly article

2011 3rd IEEE International Memory Workshop (IMW) - Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory by Souchier, E.; Vaju, C.; Guiot, V.; Corraze, B.; Janod, E.; Tranchant, J.; Mazoyer, P.; Besland, M.-P.; Cario, L. is a scholarly article available to read on EtoBox.

Author

Souchier, E.; Vaju, C.; Guiot, V.; Corraze, B.; Janod, E.; Tranchant, J.; Mazoyer, P.; Besland, M.-P.; Cario, L.

Publisher

IEEE

Published

2011

Language

EN