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Compact Graphene Plasmonic Slot Photodetector on Silicon-on-insulator with High Responsivity by Ma, Zhizhen; Kikunage, Kazuya; Wang, Hao; Sun, Shuai; Amin, Rubab; Tahersima, Mohammad; Maiti, Rishi; Miscuglio, Mario; Dalir, Hamed; Sorger, Volker J. is a scholarly article available to read on EtoBox.

What is Compact Graphene Plasmonic Slot Photodetector on Silicon-on-insulator with High Responsivity about?

Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components usually results in a weak light-graphene interaction leading to large device lengths limiting electro-optic performance. In contrast, here we demonstrate a plasmonic slot graphene photodetector on silicon-on-insulator platform with high-responsivity given the 5 um-short device length. We observe that the maximum photocurrent, and hence the highest responsivity, scales inversely with the slot gap width. Using a dual-lithography step, we realize 15 nm narrow slots that show a 15-times higher responsivity per unit device-length compared to photonic graphene photodetectors. Furthermore, we reveal that the back-gated electrostatics is overshadowed by channel-doping contributions induced by the contacts of this ultra-short channel graphene photodetector. This leads to quasi charge neutrality, which explains both the previously-unseen offset between the maximum photovoltaic-based photocurrent relative to graphenes Dirac point and the observed non-ambipolar

Author

Ma, Zhizhen; Kikunage, Kazuya; Wang, Hao; Sun, Shuai; Amin, Rubab; Tahersima, Mohammad; Maiti, Rishi; Miscuglio, Mario; Dalir, Hamed; Sorger, Volker J.

Published

2018

Language

EN