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About this Engineering article
Improvement of Subthreshold Characteristics of Dopingless Tunnel FET Using Hetero Gate Dielectric Material: Analytical Modeling and Simulation by G, Lakshmi Priya; N B, Balamurugan is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- G, Lakshmi Priya; N B, Balamurugan
- Publisher
- Springer Netherlands; Springer-Verlag; Springer Verlag; Springer Science and Business Media LLC (ISSN 1876-990X)
- Published
- 2019
- Field
- Engineering (Physical Sciences)