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What is Novel P-Type Bulk-Inserted Erase Operation in Vertical NAND Flash Memory about?

This document presents a novel p-type bulk-inserted bitline pad structure for vertical NAND (VNAND) flash memory aimed at improving erase operation efficiency. The proposed structure enhances hole carrier transfer during erase operations, overcoming limitations of conventional designs that rely solely on gate-induced drain leakage (GIDL). Numerical analyses indicate significant performance gains in erase time, making this approach a promising advancement in VNAND technology.

Author

Vishal Tiwari

Language

EN