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About this Engineering article
Effect of substrate orientation on strain relaxation mechanisms of InGaAs layer grown on vicinal GaAs substrates measured by in situ X-ray diffraction by Suzuki, Hidetoshi; Sasaki, Takuo; Takahasi, Masamitu; Ohshita, Yoshio; Kojima, Nobuaki; Kamiya, Itaru; Fukuyama, Atsuhiko; Ikari, Tetsuo; Yamaguchi, Masafumi is a Engineering article available to read on EtoBox.
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- Author
- Suzuki, Hidetoshi; Sasaki, Takuo; Takahasi, Masamitu; Ohshita, Yoshio; Kojima, Nobuaki; Kamiya, Itaru; Fukuyama, Atsuhiko; Ikari, Tetsuo; Yamaguchi, Masafumi
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2017
- Language
- EN
- Field
- Engineering (Physical Sciences)