About this scholarly article

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) - Characteristics of AlGaN/GaN HEMT devices with SiN passivation by Jong-Soo Lee, ; Vescan, A.; Wieszt, A.; Dietrich, R.; Leier, H.; Young-Se Kwon, is a scholarly article available to read on EtoBox.

Author

Jong-Soo Lee, ; Vescan, A.; Wieszt, A.; Dietrich, R.; Leier, H.; Young-Se Kwon,

Publisher

IEEE

Published

2000

Language

EN