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This abstract presents a physical model to describe the current-voltage response of quasi-ballistic GaN HEMTs operating at ultra-low temperatures up to the cryogenic limit (4.2 K). The model includes various sources of carrier scatterings, such as due to interface roughness and phonons, as well as the temperature-dependent thermal conductivity of the heterostructure to make realistic assessments of the merits of GaN technology at ultra-low temperatures. The model is validated in the temperature range of 77 K to 300 K using a judicious mix of measurement data and technology computer-aided design (TCAD) simulations. The model is further applied to predict the device's I-V curves, transconductance, and cut-off frequency at 4.2 K over a broad bias range. The model presented here offers critical insights into the role of temperature and heterostructure design of GaN HEMTs when used in an extremely lowtemperature environment. Additionally, the model can be integrated into a circuit simulation framework to facilitate the design of cryogenic GaN-based control circuitry that can be interfaced with quantum computing hardware.

Author

Kexin Li; Shaloo Rakheja

Publisher

IEEE

Published

2022

Language

EN