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This document presents the design and performance of a 37 dBm power amplifier (PA) using 0.25 µm optical T-gate pseudomorphic high electron mobility transistor (pHEMT) technology, achieving 5 W output power across 13–19 GHz with an average power-added efficiency of 37%. The paper details a comprehensive design methodology applicable to various technologies and frequencies, highlighting the importance of transistor cell selection, stabilization, and impedance matching. Measurement results indicate competitiv

Author

sky02178

Language

EN