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About this Engineering article
A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors by Fleetwood, D. M.; Dressendorfer, P. V.; Turpin, D. C. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Fleetwood, D. M.; Dressendorfer, P. V.; Turpin, D. C.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
- Published
- 1987
- Field
- Engineering (Physical Sciences)