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This document discusses the transition of the three-dimensional topological insulator Bi2Se3 to a two-dimensional limit through the growth of thin films using molecular beam epitaxy. It highlights the thickness-dependent evolution of band structures and surface states, revealing the presence of a Dirac cone and the effects of quantum tunneling and spin-orbit coupling. The findings suggest potential applications in low-power electronics and quantum computing due to the robust nature of the surface states aga

Author

Edycleyson Souza

Language

EN