About this document
Ibbetson 2000 by avigantait is a document available to read on EtoBox.
This document discusses the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors, emphasizing the role of surface states as a significant source of electrons. The study combines theoretical analysis with experimental Hall data, revealing that surface donors are responsible for the 2DEG formation, particularly when the barrier thickness exceeds 35 Å. The findings contribute to the understanding of polarization effects and charge dynamics in these semiconduct
- Author
- avigantait
- Language
- EN