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Can I read Analysis of sublimation growth of bulk SiC crystals in tantalum container on EtoBox?
Analysis of sublimation growth of bulk SiC crystals in tantalum container by S.Yu Karpov; A.V Kulik; I.A Zhmakin; Yu.N Makarov; E.N Mokhov; M.G Ramm; M.S Ramm; A.D Roenkov; Yu.A Vodakov is a Engineering article available to read on EtoBox.
What is Analysis of sublimation growth of bulk SiC crystals in tantalum container about?
Sublimation growth of SiC bulk crystals in tantalum container is studied both experimentally and theoretically. The model of heterogeneous processes occurred on the side wall of the tantalum container proposed recently in Ramm et al. (Mat. Sci. Eng. B 61}62 (1999) 107) is extended to take into account the process of carbon gettering by the container side wall. We formulate a quasi-steady approach for modeling of the bulk crystal growth. Using this concept we predict evolution of the crystal shape and study processes which govern SiC bulk crystal growth. We apply anisotropic thermal elastic analysis to predict stress distribution in the growing crystal. For the "rst time a model of dislocation formation is applied for SiC bulk growth to compute dislocation density "eld in highly stressed areas of the growing crystal.
Who reads Analysis of sublimation growth of bulk SiC crystals in tantalum container?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- S.Yu Karpov; A.V Kulik; I.A Zhmakin; Yu.N Makarov; E.N Mokhov; M.G Ramm; M.S Ramm; A.D Roenkov; Yu.A Vodakov
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)