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High growth rates (>30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor by R.L. Myers; Y. Shishkin; O. Kordina; S.E. Saddow is a Engineering article available to read on EtoBox.

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Epitaxial growth of 4H-SiC is reported at repeatable growth rates up to 32 mm/h in a horizontal hot-wall CVD reactor at temperatures between 1530 and 1560 1C. The growth rate as a function of silane (the source of silicon) flow was studied. The doping concentration was also investigated. The conversion from p-to n-type conductivity occurred when the Si/C ratio was changed from 1.0 to 1.2. Films up to 65 mm thick were grown with a growth rate of 32 mm/h. The surface roughness increased slightly for thicker films, with the occasional incorporation of carrot-like and triangular defects. The structural quality of the films, measured by X-ray diffraction, is comparable to the best results reported in the literature for 4H-SiC.

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Author

R.L. Myers; Y. Shishkin; O. Kordina; S.E. Saddow

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)