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The Effect of Metallic Oxide Layer on Reliability of Lead Zirconate Titante Thin Film Capacitors by Geunjo Han; J. Lee is a Engineering article available to read on EtoBox.
What is The Effect of Metallic Oxide Layer on Reliability of Lead Zirconate Titante Thin Film Capacitors about?
Ž . Ž . The fatigue characteristics of Pb Zr,Ti O PZT thin film capacitors with various metallic oxide layers between PZT and Pt 3 Ž . Ž . electrodes have been investigated. Various metallic oxides such as MgO, CeO , Mn O , and La,Sr CoO LSCO were used. 2 2 3 3 These oxides range over a wide variety of non-stoichiometry, i.e. from stoichiometric insulating oxides to non-stoichiometric ̊Ž . Ž . conducting oxides. These PZT thin film capacitor stacks consist of Ptrmetallic oxiderPZT 2000 A rLSCO 700 A rPtrTirSiO rSi, in which the PZT layers grown on these LSCO layers were the randomly oriented perovskite phase. Therefore, 2 the PtrPZT interface was modified with the metallic oxide layers. As the degree of non-stoichiometry in the metallic oxide film increases, the fatigue resistance of the PZT thin film capacitors tends to increase. This result suggests that non-stoichiometric oxides alleviate the accumulation of oxygen vacancies near the interface which has been proposed as a primary cause of fatigue in lead base perovskite thin films. It is suggested that the change in the oxygen stoichiometry near the modified interface via oxygen transport or surface reaction affects the fatigue
Who reads The Effect of Metallic Oxide Layer on Reliability of Lead Zirconate Titante Thin Film Capacitors?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Geunjo Han; J. Lee
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)