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Sb on In/Si(111) processes with dynamically observable LEEM, selected area LEED and chemically analyzed SR-XPEEM by A. Nakaguchi; F.-Z. Guo; M. Hashimoto; M. Ueda; T. Yasue; T. Matsushita; Y. Tamenori; T. Kinoshita; K. Kobayashi; T. Koshikawa is a Engineering article available to read on EtoBox.
What is Sb on In/Si(111) processes with dynamically observable LEEM, selected area LEED and chemically analyzed SR-XPEEM about?
## Abstract Sb adsorption processes on In/Si(111) √3 × √3 and √31 × √31 surfaces were investigated in the present work. The dynamic growth behavior was observed with low energy electron microscopy (LEEM), and the local surface structure change was monitored with selected area low energy electron diffraction (LEED). X‐ray generated photo emission electron microscopy using synchrotron radiation (SR‐XPEEM) was employed in order to see the variation of the chemical state on the surface. On both √3 × √3 and √31 × √31 surfaces, Sb adsorption induces the surface structural change and modifies the chemical interaction of In atoms with Si. In atoms are replaced by impinged Sb atoms, and the discharged In atoms form islands. Copyright © 2006 John Wiley & Sons, Ltd.
Who reads Sb on In/Si(111) processes with dynamically observable LEEM, selected area LEED and chemically analyzed SR-XPEEM?
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- Author
- A. Nakaguchi; F.-Z. Guo; M. Hashimoto; M. Ueda; T. Yasue; T. Matsushita; Y. Tamenori; T. Kinoshita; K. Kobayashi; T. Koshikawa
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley; Research Square (ISSN 0142-2421)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)