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About this Engineering article
Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO 2 /AlN date dielectric for RF power applications by Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi is a Engineering article available to read on EtoBox.
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- Author
- Chiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2017
- Language
- EN
- Field
- Engineering (Physical Sciences)