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Device and Circuit Cryogenic Operation for Low Temperature Electronics by Francis Balestra, Gérard Ghibaudo (auth.), Francis Balestra, Gérard Ghibaudo (eds.) is a nonfiction available to read on EtoBox.
What is Device and Circuit Cryogenic Operation for Low Temperature Electronics about?
__Device and Circuit Cryogenic Operation__ for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devic
Who reads Device and Circuit Cryogenic Operation for Low Temperature Electronics?
It is typically read by self-directed learners exploring a subject in depth.
Common subject areas: history, science, philosophy, social sciences.
- Author
- Francis Balestra, Gérard Ghibaudo (auth.), Francis Balestra, Gérard Ghibaudo (eds.)
- Publisher
- Springer US : Imprint : Springer
- Published
- 2001
- Language
- EN
- ISBN
- 9780792373773
- Category
- nonfiction
- Subjects
- Science, Engineering, Stem
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