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This study evaluates the lithographic performance of two high etch resistance resists, ZEP520A and mr-PosEBR, using electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography. Both materials demonstrated high sensitivity and resolution, with ZEP520A achieving a dose to clear of less than 12 mJ/cm2 and a resolution of 25 nm half-pitch. The findings indicate that the established EBL process can be effectively extended to EUV lithography, providing new opportunities for nanoscale fabrication.
- Author
- 368shima
- Language
- EN