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This document discusses simulation and optimization of high-electron mobility transistors (HEMTs). It begins by introducing HEMTs and their importance for high-speed integrated circuits. It then discusses previous work on simulating and modeling HEMT characteristics. The authors developed a simulation system that self-consistently solves the Poisson and Schrodinger equations using the finite element method. They applied their simulation to a GaN-based HEMT and found that grading the aluminum fraction in the

Author

Kavita Upadhyay

Language

EN