Can I read Carrier Drift, Diffusion, and R&G Mechanics on EtoBox?

Carrier Drift, Diffusion, and R&G Mechanics by Bimbim Ahmad is a document available to read on EtoBox.

What is Carrier Drift, Diffusion, and R&G Mechanics about?

Carriers in semiconductors can drift, diffuse, and undergo generation and recombination (R&G). Drift occurs due to an electric field and is described by the mobility. Diffusion occurs due to concentration gradients and is described by the diffusion constant D. R&G mechanisms include band-to-band and trap-assisted processes. At equilibrium, the generation and recombination rates are equal. Excess carriers generated by illumination decay exponentially over time with a lifetime τ related to the mobility-lifeti

Author

Bimbim Ahmad

Language

EN