Opening book details…
About this Engineering article
Molecular beam epitaxy grown 0.6 eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant by B. Wernsman; T. Bird; M. Sheldon; S. Link; R. Wehrer is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- B. Wernsman; T. Bird; M. Sheldon; S. Link; R. Wehrer
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 2006
- Language
- EN
- Field
- Engineering (Physical Sciences)
More by B. Wernsman; T. Bird; M. Sheldon; S. Link; R. Wehrer
Browse all works by B. Wernsman; T. Bird; M. Sheldon; S. Link; R. Wehrer