About this scholarly article

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) - Optimization of post N/sub 2/ treatment & USG cap layer to improve tungsten peeling defects for deep sub-micron device yield improvement by Cheng, Y.L.; Wang, Y.L.; Wu, S.A.; Wang, H.L.; Wang, J.K. is a scholarly article available to read on EtoBox.

Author

Cheng, Y.L.; Wang, Y.L.; Wu, S.A.; Wang, H.L.; Wang, J.K.

Publisher

Ultra Clean Soc

Published

2000