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About this Materials Science article
Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy by Jeganathan, K.; Shimizu, M. is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Jeganathan, K.; Shimizu, M.
- Publisher
- American Institute of Physics; American Institute of Physics Inc.; Melville NY: American Institute of Physics; AIP Publishing (ISSN 2158-3226)
- Published
- 2014
- Language
- EN
- Field
- Materials Science (Physical Sciences)