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This study investigates the impact of aluminum (Al) segregation on the Schottky barrier height and effective work function in various high-k/metal gate stacks, specifically TiAl/TiN/HfO2. The findings reveal that Al incorporation increases the p-type Schottky barrier height and induces an n-type shift in the effective work function due to enhanced interface dipole fields. The results highlight the significance of Al impurities at the metal/dielectric interface in controlling the effective work function in t

Author

strg180

Language

EN