About this scholarly article

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers - 1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films by Tai, M.; Ohyanagi, T.; Kinoshita, M.; Morikawa, T.; Akita, K.; Kato, S.; Shirakawa, H.; Araidai, M.; Shiraishi, K.; Takaura, N. is a scholarly article available to read on EtoBox.

Author

Tai, M.; Ohyanagi, T.; Kinoshita, M.; Morikawa, T.; Akita, K.; Kato, S.; Shirakawa, H.; Araidai, M.; Shiraishi, K.; Takaura, N.

Publisher

IEEE

Published

2014

Language

EN