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This document discusses a dual-functional resistive switching device utilizing a structure of (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx) that enables both non-volatile memory switching and volatile threshold switching. The device demonstrates low operation voltage and self-compliance, making it suitable for high-density memory applications while addressing sneak current issues in crossbar memory arrays. The study highlights the significance of oxygen ion movement in achieving the desired swi

Author

Massimo Tormen

Language

EN