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3-T CMOS OTP ROM Cell Array Design by 陳景裕 is a document available to read on EtoBox.

This document presents a three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array utilizing a gate oxide antifuse (AF) for permanent breakdown, which is compatible with standard CMOS technology. The proposed design offers a cost-effective solution for high-density memory applications in digital and analog circuits, demonstrating reliable performance and reduced complexity compared to traditional methods. Experimental results indicate the viability of this technology for modern electronic appli

Author
陳景裕
Language
EN