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2012 IEEE International Reliability Physics Symposium (IRPS) - Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks by Raghavan, N.; Pey, K.L.; Shubhakar, K.; Wu, X.; Liu, W.H.; Bosman, M. is a scholarly article available to read on EtoBox.
- Author
- Raghavan, N.; Pey, K.L.; Shubhakar, K.; Wu, X.; Liu, W.H.; Bosman, M.
- Publisher
- IEEE
- Published
- 2012
- Language
- EN
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