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Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm by Varavin, V.S.; Sabinina, I.V.; Sidorov, G.Yu.; Marin, D.V.; Remesnik, V.G.; Predein, A.V.; Dvoretsky, S.A.; Vasilyev, V.V.; Sidorov, Yu.G.; Yakushev, M.V.; Latyshev, A.V. is a Engineering article available to read on EtoBox.

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Author
Varavin, V.S.; Sabinina, I.V.; Sidorov, G.Yu.; Marin, D.V.; Remesnik, V.G.; Predein, A.V.; Dvoretsky, S.A.; Vasilyev, V.V.; Sidorov, Yu.G.; Yakushev, M.V.; Latyshev, A.V.
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 1350-4495)
Published
2020
Field
Engineering (Physical Sciences)

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