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About this Engineering article
Pinch-off in Insulated-gate Field Effect Transistors by G.A. Armstrong; J.A. Magowan is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- G.A. Armstrong; J.A. Magowan
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 1971
- Field
- Engineering (Physical Sciences)