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About this Materials Science article
Interface Recombination Velocity at the Si/SiO2 Interface Determined from Bias-Dependent Photoluminescence by N. Stein; H. Röppischer is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- N. Stein; H. Röppischer
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 1991
- Language
- EN
- Field
- Materials Science (Physical Sciences)