About this scholarly article

International Technical Digest on Electron Devices Meeting - New design technology for EEPROM memory cells with 10 million write/erase cycling endurance by Endoh, T.; Shirota, R.; Tanaka, Y.; Nakayama, R.; Kirisawa, R.; Aritome, S.; Masuoka, F. is a scholarly article available to read on EtoBox.

Author

Endoh, T.; Shirota, R.; Tanaka, Y.; Nakayama, R.; Kirisawa, R.; Aritome, S.; Masuoka, F.

Publisher

IEEE

Published

1989

Language

EN