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Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy by V Mantovani; S Sanguinetti; M Guzzi; E Grilli; M Gurioli; K Watanabe; N Koguchi is a Physics and Astronomy article available to read on EtoBox.

What is Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy about?

We present a detailed analysis of the Ga coverage and of the post-growth annealing effects on the optical properties of very-low-density self-assembled GaAs/AlGaAs quantum dots grown by modified droplet epitaxy. Through theoretical calculation of the QD electronic states, including thermally activated Al-Ga interdiffusion processes, we were able to relate our spectroscopic observations to QD structural properties.

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Author

V Mantovani; S Sanguinetti; M Guzzi; E Grilli; M Gurioli; K Watanabe; N Koguchi

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 1386-9477)

Published

2004

Language

EN

Field

Physics and Astronomy (Physical Sciences)