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Controlled Synthesis and Transfer of Large-Area WS~2~ Sheets: From Single Layer to Few Layers by Ana Laura Elías; Néstor Perea-López; Andrés Castro-Beltrán; Ayse Berkdemir; Ruitao Lv; Simin Feng; Aaron D. Long; Takuya Hayashi; Yoong Ahm Kim; Morinobu Endo; Humberto R. Gutiérrez; Nihar R. Pradhan; Luis Balicas; Thomas E. Mallouk; Florentino López-Urías; Humberto Terrones; Mauricio Terrones is a Engineering article available to read on EtoBox.

What is Controlled Synthesis and Transfer of Large-Area WS~2~ Sheets: From Single Layer to Few Layers about?

The isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large area (~1cm 2 ) WS 2 sheets with thicknesses ranging from monolayers to a few layers. During synthesis, WO x thin films are first deposited on Si/SiO 2 substrates, which are then sulfurized (under vacuum) at high temperatures (750-950°C). An efficient route to transfer the synthesized WS 2 films onto different substrates such as quartz and transmission electron microscopy (TEM) grids has been satisfactorily developed using concentrated HF. Samples with different thicknesses have been analyzed by Raman spectroscopy, TEM and their photoluminescence properties have been evaluated. We demonstrated the presence of single-, biand few-layered WS 2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layers, ranging from indirect band-gap semiconductor in bulk phase to direct band-gap semiconductor in monolayers. This method has also proved

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Author
Ana Laura Elías; Néstor Perea-López; Andrés Castro-Beltrán; Ayse Berkdemir; Ruitao Lv; Simin Feng; Aaron D. Long; Takuya Hayashi; Yoong Ahm Kim; Morinobu Endo; Humberto R. Gutiérrez; Nihar R. Pradhan; Luis Balicas; Thomas E. Mallouk; Florentino López-Urías; Humberto Terrones; Mauricio Terrones
Publisher
American Chemical Society (ACS)
Published
2013
Language
EN
Field
Engineering (Physical Sciences)

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