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The study investigates the electronic structure of epitaxial LaVO3 thin films using resonant photoemission spectroscopy and x-ray absorption near edge spectroscopy, revealing a Mott-Hubbard type insulating nature at room temperature. The findings indicate a weaker hybridization between V 3d and O 2p states compared to its bulk counterpart, which is situated between charge transfer and Mott-Hubbard regimes. The research highlights the importance of epitaxial strain and its effects on the electronic propertie

Author

choudhurysambit8888

Language

EN