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APT12060 Power MOSFET Specifications by Lucas de Oliveira is a document available to read on EtoBox.

The document provides specifications for the APT12060B2VR and APT12060LVR, high voltage N-Channel enhancement mode power MOSFETs with a maximum drain-source voltage of 1200V and continuous drain current of 20A. It highlights features such as lower leakage, faster switching, and 100% avalanche testing, along with detailed electrical and thermal characteristics. Additionally, it includes package outlines for T-MAX™ and TO-264 packaging options.

Author
Lucas de Oliveira
Language
EN